2d photovoltaic devices progress and prospects

Can 2D materials be used to design high-performance photovoltaic devices?

Our work suggests an effective scheme to design high-performance photovoltaic devices assembled by 2D materials. Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts.

Are ultrathin flexible photovoltaic devices based on 2D nanomaterials effective?

This review presents the progress, challenges and prospects of ultrathin flexible photovoltaic devices based on 2-dimensional (2D) nanomaterials. These devices have shown very high performance in bending stabilities for up to ~90% of their power conversion efficiencies (PCEs) after multiple bending deformations.

What is a 2D vdwhs photovoltaic device?

Our work lays a foundation for the next generation of 2D vdWHs photovoltaic devices comprising a combination of a large bandgap semiconductor as the depleted absorption layer and a narrow bandgap semiconductor as the effective carrier selective contact.

Can vdwhs photodiodes be applied to other 2D semiconductors?

The vdWHs photodiodes with unilateral depletion region band structure can be applied to other 2D semiconductors, for example BP (similar to AsP). A MoS 2 /BP vdWHs photodiode with unilateral depletion region was successfully fabricated and demonstrated similar photovoltaic response (Supplementary Figs. 32 – 35 and Note 6).

What is Oxford photvoltaics doing with tandem solar cells?

Oxford Photvoltaics is currently developing 6-inch wafer-based perovskite/Si tandem cells and is expected to commence perovskite/Si tandem solar cell production soon 116. It is worth noting that for 2-T tandem solar cells to operate at their peak efficiency, the Jsc values of each subcell must be well matched.

What is the photovoltaic effect of a MOS 2 / Asp heterodiode?

As a result, the MoS 2 /AsP heterodiode exhibits a pronounced photovoltaic effect with a short-circuit current as high as 1.3 μA and a large open-circuit voltage of 0.61 V under 520 nm laser illumination. More importantly, a record high power conversion efficiency of 9% and a fast response time of 9 μs are achieved.